MBR60100

Naina Semiconductor Ltd. Schottky Power Diode, 60A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR6045 thru MBR60100R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 45 32 45 60 700 http://www.DataSheet4U.net/ 60 42 60 60 700 0.75 5 150 80 57 80 60 700 0.84 5 150 100 70 100 60 700 0.84 5 V V V A A V 0.65 5 Reverse current IR 150 150 mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit o Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Rth(JC) TJ Tstg F W 1.0 -65 to 150 -65 to 175 4.0 17.0 C/W o o C C Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina Semiconductor Ltd. Package Outline MBR6045 thru MBR60100R http://www.DataSheet4U.net/ ALL DIMENSIONS ...