Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30020CT thru MBR30040CTR
Silicon Schottky Diode, 300A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR30020CT (R) 20 14 20 300 MBR30030CT MBR30035CT (R) (R) 30 21 30 300 35 25 35 300 MBR30040CT (R) 40 28 40 300 Units V V V A
IFSM
2500
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2500
2500
2500
A
Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 150 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR30020CT (R) 0.68 8 200 MBR30030CT (R) 0.68 8 200 MBR30035CT (R) 0.68 8 200 MBR30040CT (R) 0.68 8 mA 200 Units V
DC reverse current
IR
Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR30020CT (R) 0.4 - 40 to +175 MBR30030CT (R) 0.4 - 40 to +175 MBR30035CT (R) 0.4 - 40 to +175 MBR30040CT (R) 0.4 - 40 to +175 Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR30020CT thru MBR30040CTR
http://www.DataSheet4U.net/
ALL DIMENSIONS IN MM
Ordering Table
MBRP 1 300 2 20 3 CT 4
1 – Device Type > MBR = Schottky Barrier Diode Module 2 – Current Rating = IF(AV) 3 – Voltage = VRRM 4 – Polarity > CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
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