MBR40040CT

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40020CT thru MBR40040CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40020CT (R) 20 14 20 400 MBR40030CT MBR40035CT (R) (R) 30 21 30 400 35 25 35 400 MBR40040CT (R) 40 28 40 400 Units V V V A IFSM 3000 http://www.DataSheet4U.net/ 3000 3000 3000 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 200 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR40020CT (R) 0.68 5 200 MBR40030CT (R) 0.68 5 200 MBR40035CT (R) 0.68 5 200 MBR40040CT (R) 0.68 5 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR40020CT (R) 0.35 - 40 to +175 MBR40030CT (R) 0.35 - 40 to +175 MBR40035CT (R) 0.35 - 40 to +175 MBR40040CT (R) 0.35 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Na...