POWER MOSFET. 2N6782LCC4 Datasheet

2N6782LCC4 MOSFET. Datasheet pdf. Equivalent

Part 2N6782LCC4
Description N-CHANNEL POWER MOSFET
Feature 2N6782LCC4 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (.
Manufacture Seme LAB
Datasheet
Download 2N6782LCC4 Datasheet

2N6782LCC4 MECHANICAL DATA Dimensions in mm (inches) N–CHA 2N6782LCC4 Datasheet
Recommendation Recommendation Datasheet 2N6782LCC4 Datasheet




2N6782LCC4
2N6782LCC4
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
1.27 (0.050)
1.07 (0.040)
7.62 (0.300)
7.12 (0.280)
11
10
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43
0.18
(0.017)
(0.007
Rad.
2.16 (0.085)
MOSFET
GATE
DRAIN
SOURCE
LCC4
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
VDSS
ID(cont)
RDS(on)
100V
3.1A
0.6W
FEATURES
• SURFACE MOUNT
• SMALL FOORPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
3.1A
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
2.0A
IDM Pulsed Drain Current 1
12A
PD Power Dissipation @ Tcase = 25°C
11W
Linear Derating Factor
0.09W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
68mJ
5.5V/ns
TJ , Tstg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 50V , L ³ 570mH , RG = 25W , Peak IL = 14A , Starting TJ = 25°C
3) @ ISD £ 14A , di/dt £ 140A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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2N6782LCC4
2N6782LCC4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 2A
ID = 3.1A
ID = 250mA
IDS = 2A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 3.1A
VDS = 0.5BVDSS
VDD = 50V
ID = 3.1A
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current 2
VSD Diode Forward Voltage 1
trr Reverse Recovery Time
Qrr Reverse Recovery Charge 1
ton Forward Turn–On Time
THERMAL CHARACTERISTICS
IS = 3.1A
TJ = 25°C
VGS = 0
IF = 7.4A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
100
0.10
2
0.8
180
82
15
4.1
0.4
1.4
Negligible
RqJC Thermal Resistance Junction – Case
RqJPC Thermal Resistance Junction – PC Board
Max.
0.6
0.69
4
25
250
100
–100
6.5
1.6
3.5
15
25
25
20
3.1
12
1.5
180
2.0
11
27
Unit
V
V/°C
W
V
S (É)
mA
nA
pF
nC
ns
A
V
ns
mC
°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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