Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR40045CT thru MBR400100CTR
Silicon Schottky Diode, 400A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A
IFSM
3000
http://www.DataSheet4U.net/
3000
3000
3000
A
Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 200 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR40045CT (R) 0.68 5 200 MBR40060CT (R) 0.68 5 200 MBR40080CT (R) 0.68 5 200 MBR400100C T(R) 0.68 5 mA 200 Units V
DC reverse current
IR
Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR40045CT (R) 0.35 - 40 to +175 MBR40060CT (R) 0.35 - 40 to +175 MBR40080CT (R) 0.35 - 40 to +175 MBR400100C T(R) 0.35 - 40 to +175 Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR40045CT thru MBR400100CTR
http://www.DataSheet4U.net/
ALL DIMENSIONS IN MM
Ordering Table
MBR 1 400 2 45 3 CT 4
1 – Device Type > MBR = Schottky Barrier Diode Module 2 – Current Rating = IF(AV) 3 – Voltage = VRRM 4 – Polarity > CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
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