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P60N03L Dataheets PDF



Part Number P60N03L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description EQP60N03L
Datasheet P60N03L DatasheetP60N03L Datasheet (PDF)

FQP60N03L May 2001 QFET FQP60N03L 30V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC conver.

  P60N03L   P60N03L



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FQP60N03L May 2001 QFET FQP60N03L 30V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • 60A, 30V. RDS(on) = 0.0135Ω @VGS = 10 V Low gate charge ( typical 18.5 nC) Low Crss ( typical 155 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series http://www.DataSheet4U.net/ ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP60N03L 30 60 42.5 240 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 220 60 10.0 7.0 100 0.67 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 1.50 -62.5 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 datasheet pdf - http://www.DataSheet4U.net/ FQP60N03L Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 30 V, VGS = 0 V VDS = 24 V, TC = 150°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 ------0.02 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A VGS = 5 V, ID =30 A VDS = 15 V, ID = 30 A (Note 4) 1.0 ---- -0.011 0.015 33 2.5 0.0135 0.019 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---875 570 155 1140 740 200 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On De.


EG8010 P60N03L 1N5829


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