Non-isolated Thyristor Module
Naina Semiconductor emiconductor Ltd.
Non Non-isolated Thyristor Module
Features
• • • • • Low voltage three-phase High ...
Description
Naina Semiconductor emiconductor Ltd.
Non Non-isolated Thyristor Module
Features
Low voltage three-phase High surge current of 2500A @ 60Hz Easy construction Non-isolated Mounting base as common anode
60NT3
Voltage Ratings (TC = 25OC unless otherwise specified) Parameter
Maximum repetitive peak reverse voltage Maximum non-repetitive peak reverse voltage Maximum repetitive peak off-state voltage
Symbol
VRRM VRSM VDRM
Values
300 360 300
Units
V V V
NT3
Electrical Characteristics (TC = 25OC unless otherwise specified) Parameter
Average on-state current R.M.S. on-state current On-state surge current I t required for fusing Peak gate power dissipation Average gate power dissipation Peak gate current Peak gate voltage (forward) Peak gate voltage (reverse) Critical rate of rise of on-state current Critical rate of rise of off-state voltage Holding current I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1 A/µs 0 2/3 TJ = 150 C, V0 = VDRM , exponential wave
2
Conditions
Single phase, half half-wave, 180 0 conduction @ TC = 116 C
0
Symbol
IT(AV) IT(RMS) ITSM It PGM PGM(AV) IGM VFGM VRGM di/dt dv/dt IH
2
Values
60 94 1900 14000 10 1 3 10 5 50 50 100
Units
A A A AS W W A V V A/µs V/µs mA
2
half cycle, 50Hz/60Hz, peak value, non-repetitive repetitive
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Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified) Parameter
Operating junction temperature range Storage temperature range Thermal resistance, junction to case
Symbol
TJ TSTG Rt...
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