80NT3 Datasheet PDF | Naina Semiconductor





(PDF) 80NT3 Datasheet

Part Number 80NT3
Description Non-isolated Thyristor Module
Manufacture Naina Semiconductor
Total Page 2 Pages
PDF Download Download 80NT3 Datasheet PDF

Features: Naina Semiconductor emiconductor Ltd. No n-isolated Thyristor Module Features • • • • Low voltage three-pha se High surge current of 2500A @ 60Hz E asy construction Non-isolated Mounting base as common anode 80NT3 Voltage Ra tings (TC = 25OC unless otherwise speci fied) Parameter Maximum repetitive peak reverse voltage Maximum non-repetitive peak reverse voltage Maximum repetitiv e peak off-state voltage Symbol VRRM V RSM VDRM Values 300 360 300 Units V V V NT3 Electrical Characteristics (TC = 25OC unless otherwise specified) Par ameter Average on-state current R.M.S. on-state current On-state surge current I t required for fusing Peak gate powe r dissipation Average gate power dissip ation Peak gate current Peak gate volta ge (forward) Peak gate voltage (reverse ) Critical rate of rise of on-state cur rent Critical rate of rise of off-state voltage Holding current I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1 A/µs 0 2/3 TJ = 150 C, V0 = VDRM , exponential wave 2 Conditions Single phase, half half.

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80NT3 datasheet
Naina Semiconductor Ltd.
Non-isolated Thyristor Module
Features
Low voltage three-phase
High surge current of 2500A @ 60Hz
Easy construction
Non-isolated
Mounting base as common anode
80NT3
Voltage Ratings (TC = 25OC unless otherwise specified)
Parameter
Symbol Values Units
Maximum repetitive peak
reverse voltage
VRRM
300
V
Maximum non-repetitive
peak reverse voltage
VRSM
360
V
Maximum repetitive peak
off-state voltage
VDRM
300
V
NT3
Electrical Characteristics (TC = 25OC unless otherwise specified)
Parameter
Conditions
Average on-state current
R.M.S. on-state current
Single phase, half-wave, 1800
conduction @ T = 116 CC
0
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On-state surge current
I2t required for fusing
half cycle, 50Hz/60Hz, peak value,
non-repetitive
Peak gate power dissipation
Average gate power dissipation
Peak gate current
Peak gate voltage (forward)
Peak gate voltage (reverse)
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1
A/µs
TJ = 1500C, V0 = 2/3 VDRM , exponential
wave
Holding current
Symbol
IT(AV)
IT(RMS)
ITSM
I2t
PGM
PGM(AV)
IGM
VFGM
VRGM
di/dt
dv/dt
IH
Values
80
125
2280
26000
10
1
3
10
5
50
50
100
Units
A
A
A
A2S
W
W
A
V
V
A/µs
V/µs
mA
Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified)
Parameter
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
Symbol
TJ
TSTG
Rth(JC)
Values
-30 to +150
-30 to +125
0.35
Units
0C
0C
0C/W
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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