NTR3A30PZ

NTR3A30PZ MOSFET – Power, Single P-Channel, SOT-23, 2.4 x 2.9 x 1.0 mm -20 V, -5.5 A Features Low RDS(on) Solution in 2.4 mm x 2.9 mm Package ESD Diode−Protected Gate These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch Battery Switch Optimized for Power Management Applications for Portable Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and Others www.onsemi.com V(BR)DSS −20 V RDS(on) Max 38 mW @ −4.5 V 50 mW @ −2.5 V 73 mW @ −1.8 V ID MAX −5.5 A P−Channel MOSFET D3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8 V Drain Current (Note 1) Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −3.0 A −2.2 t ≤ 5 s TA = 25°C −5.5 Power Dissipation (Note 1) Steady TA = 25°C PD State 0.48 W t≤5s 1.58 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature ESD HBM, JESD22−A114 Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) IDM −9.1 A TJ, −55 to °C TSTG 150 VESD 2000 V IS −0.48 A TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Stead...