NGTB20N120LWG

NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. Features http://onsemi.com Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge 5 ms Short Circuit Capability These are Pb−Free Devices Inverter Welding Machines Microwave Ovens Industrial Switching Motor Control Inverter ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Short Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Symbol VCES IC Value 1200 40 20 200 Unit http://www.DataSheet4U.net/ 20 A, 1200 V VCEsat = 1.80 V Eoff = 0.7 mJ C Typical Applications G E V A G C E TO−247 CASE 340L STYLE 4 ICM IF A A MARKING DIAGRAM 40 20 200 $20 192 77 5 −55 t...