NGTB40N120FLWG

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Low Saturation Voltage using NPT Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices Typical Applications Solar Inverter UPS Inverter ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed by TJmax current, Tpulse limited Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VCES IC ICM IF IFM VGE 1200 80 40 160 80 40 160 $20 ±25 V A A A A V Power Dissipation @ TC = 25°C @ TC = 100°C Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C Operating junction temperature range PD TSC TJ 260 104 10 −55 to +150 W ms °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +150 260 °C °C Stresses exceeding Maxim...