2N7002-01

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K7A Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 ±20 ±40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/°C K/W °C Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. DS30026 Rev. C-5 1 of 3 2N7002-01 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State...