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IXA60IF1200NA

IXYS

XPT IGBT

IXA60IF1200NA XPT IGBT Copack C (3) I C25 = = VCES VCE(sat)typ = 88 A 1200 V 1.8 V Part number IXA60IF1200NA (G) 2...


IXYS

IXA60IF1200NA

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IXA60IF1200NA XPT IGBT Copack C (3) I C25 = = VCES VCE(sat)typ = 88 A 1200 V 1.8 V Part number IXA60IF1200NA (G) 2 E (1+4) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Applications: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers Package: ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant IGBT Ratings Symbol VCES VGES IC25 I C90 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA SCSOA t SC I SC RthJC Total power dissipation Collector emitter leakage current Definition Collector emitter voltage Maximum DC gate voltage Collector current Conditions VGE = 0 V http://www.DataSheet4U.net/ min. TVJ = 25°C TVJ = 25°C TC = 25°C TC = 90°C TVJ = 25°C typ. max. 1200 ±20 88 56 290 0.1 Unit V V A A W mA mA nA V V V nC ns ns ns ns mJ mJ VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = ±20 V I C = 55 A; V...




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