XPT IGBT
IXA60IF1200NA
XPT IGBT
Copack
C (3)
I C25 = = VCES VCE(sat)typ =
88 A 1200 V 1.8 V
Part number
IXA60IF1200NA
(G) 2...
Description
IXA60IF1200NA
XPT IGBT
Copack
C (3)
I C25 = = VCES VCE(sat)typ =
88 A 1200 V 1.8 V
Part number
IXA60IF1200NA
(G) 2
E (1+4)
Features / Advantages:
● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage
Applications:
● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers
Package:
● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant
IGBT
Ratings Symbol VCES VGES IC25 I C90 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA SCSOA t SC I SC RthJC
Total power dissipation Collector emitter leakage current
Definition
Collector emitter voltage Maximum DC gate voltage Collector current
Conditions VGE = 0 V
http://www.DataSheet4U.net/
min. TVJ = 25°C TVJ = 25°C TC = 25°C TC = 90°C TVJ = 25°C
typ.
max. 1200 ±20 88 56 290 0.1
Unit V V A A W mA mA nA V V V nC ns ns ns ns mJ mJ
VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = ±20 V I C = 55 A; V...
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