2N720A

2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector–emitter Voltage (I R = 0) Emitter–base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value 120 80 7 500 0.5 1.8 – 65 to 200 Unit V V V mA W W °C 1/4 2N720A THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97.2 350 °C/W °C/W ELECTRICAL CHARACTERISTICS(T a mb = 25 °C unless otherwise specified) Symbol I CBO V (B R)CBO Parameter Collector Cutoff Current (I E = 0) Collector–base Breakdown Voltage (I E = 0) Collector–emitter Breakdown Voltage (I B = 0) Emitter–base Breakdown Voltage (I E = 0) Emitter Cuttoff Current (I E = 0) Collector–emitter Saturation Voltage Base–emitter Saturation Voltage DC Current Gain Test Conditions V CB = 90 V I C = 100 µA 120 Min. Typ. Max. 10 Unit nA V V (BR)CE O * I C = 30 mA 80 V V (B R)E BO I E = 100 µA 7 V I E BO V CE( sat )* V BE( sat )* h F E* VE B = 5 V I C = 50 mA I C = 150 mA I C = 50 mA I C = 150 mA I C = 100 µA I C = 10 mA I C = 150 mA I C = 50 mA f = 20 MHz IE = 0 f = 1 MHz IC = 0 f = 1 MHz I B = 5 mA I B = 1...