IRG7PSH54K10DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 50A
G E
C
C G
E
Applications Industrial Motor Drive UPS Solar Inverters Welding
n-channel
G Gate C Collector
IRG7PSH54K10DPbF E Emitter
Features
Low VCE(ON) an...
