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BLF2425M7L140 Dataheets PDF



Part Number BLF2425M7L140
Manufacturers NXP
Logo NXP
Description Power LDMOS transistor
Datasheet BLF2425M7L140 DatasheetBLF2425M7L140 Datasheet (PDF)

BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance .

  BLF2425M7L140   BLF2425M7L140



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BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal CW f (MHz) 2450 VDS (V) 28 PL(AV) (W) 140 Gp (dB) 18.5 D (%) 52 1.2 Features and benefits http://www.DataSheet4U.net/         High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors BLF2425M7L(S)140 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF2425M7L140 (SOT502A) 1 3 2 2 3 sym112 1 BLF2425M7LS140 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package http://www.DataSheet4U.net/ Type number BLF2425M7L140 BLF2425M7LS140 Name Description flanged ceramic package; 2 mounting holes; 2 leads earless flanged ceramic package; 2 leads Version SOT502A SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min 0.5 65 Max 65 +13 225 Unit V V C C 5. Thermal characteristics Table 5. Symbol Rth(j-c) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 125 W Typ 0.28 Unit K/W BLF2425M7L140; BLF2425M7LS140 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 — 6 September 2012 2 of 11 datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors BLF2425M7L(S)140 Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 2.16 mA VDS = 10 V; ID = 216 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS.


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