Document
BLF2425M7L140; BLF2425M7LS140
Power LDMOS transistor
Rev. 3 — 6 September 2012 Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions
Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal CW f (MHz) 2450 VDS (V) 28 PL(AV) (W) 140 Gp (dB) 18.5 D (%) 52
1.2 Features and benefits
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High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz
datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF2425M7L140 (SOT502A)
1 3 2 2 3
sym112
1
BLF2425M7LS140 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package http://www.DataSheet4U.net/
Type number BLF2425M7L140 BLF2425M7LS140
Name Description flanged ceramic package; 2 mounting holes; 2 leads earless flanged ceramic package; 2 leads
Version SOT502A SOT502B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min 0.5 65 Max 65 +13 225 Unit V V C C
5. Thermal characteristics
Table 5. Symbol Rth(j-c) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 125 W Typ 0.28 Unit K/W
BLF2425M7L140; BLF2425M7LS140
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 September 2012
2 of 11
datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 2.16 mA VDS = 10 V; ID = 216 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS.