N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N60I
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ...
Description
AP04N60I
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 2.35Ω 4A
Description
G D
AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
S
TO-220CFM(I)
Absolute Maximum Ratings
http://www.DataSheet4U.net/
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 +30 4 2.2 15 36.8
3
Units V V A A A W mJ A ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
8 4 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200902231
datasheet pdf - http://www.DataSheet4U.net/
AP04N60I
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ci...
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