DatasheetsPDF.com

AP04N60I-A-HF Dataheets PDF



Part Number AP04N60I-A-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP04N60I-A-HF DatasheetAP04N60I-A-HF Datasheet (PDF)

AP04N60I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 2.5Ω 4A S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest pow.

  AP04N60I-A-HF   AP04N60I-A-HF


Document
AP04N60I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 2.5Ω 4A S Description AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. G D S TO-220CFM(I) Absolute Maximum Ratings http://www.DataSheet4U.net/ Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 4 2.2 15 36.8 1.92 3 Units V V A A A W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 8 4 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201112211 datasheet pdf - http://www.DataSheet4U.net/ AP04N60I-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=1A VDS=480V VGS=10V VDD=300V ID=2A RG=50Ω VGS=10V VGS=0V VDS=25V f=1.0MHz http://www.DataSheet4U.net/ Min. 650 2 - Typ. 3.4 19.5 3.5 8.5 21 20 105 27 740 70 10 Max. Units 2.5 4 100 +100 31 1200 V Ω V S uA nA nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω o Parameter Forward On Voltage 2 Test Conditions IS=2A, VGS=0V IS=2A, VGS=0V dI/dt=100A/µs Min. - Typ. 280 2.94 Max. Units 1.5 V ns µC Reverse Recovery Time Reverse Recovery Charge THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 datasheet pdf - http://www.DataSheet4U.net/ AP04N60I-A-HF 8 5 T C =25 C ID , Drain Current (A) o 6 ID , Drain Current (A) 10V 8.0V 7.0V 6.0V T C =150 C 4 o 3 10V 8.0V 7.0V 6.0V V G =5.0V 4 2 2 V G =5.0V 1 0 0 4 8 12 16 20 24 28 0 0 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =2A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2 1 http://www.DataSheet4U.net/ 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( C ) o Fig 3. Normalized BVDSS v.s. Junction Temperature 8 1.6 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 6 IS (A) o T j = 150 C T j = 25 o C Normalized VGS(th) (V) 1.3 1.5 1.2 4 1 0.8 2 0.6 0 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 datasheet pdf - http://www.DataSheet4U.net/ AP04N60I-A-HF 12 1200 f=1.0MHz I D =1A VGS , Gate to Source Voltage (V) 10 1000 V DS =480V 8 800 C (pF) C iss 600 6 4 400 2 200 0 0 4 8 12 16 20 24 0 1 5 9 13 17 21 25 C oss C rss 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 100us 1 0.1 1ms 10ms 100ms 1s DC 0.1 0.05 http://www.DataSheet4U.net/ PDM 0.02 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.1 T c =25 C Single Pulse 0.01 1 10 100 o Single Pulse 0.01 10.


AP04N60I AP04N60I-A-HF AP04N60R-A-HF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)