SIHG47N60S-E3

V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http://www.DataSheet4U.net/ w w w. v i s h a y. c o m datasheet pdf - http://www.DataSheet4U.net/ 600 V power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 Vishay is adding to its Super Junction power MOSFET family with new n-channel devices in the TO-247 package, featuring ultra-low maximum on-resistance and low gate charge for an improved figure of merit (FOM). Features: High E AR capability Improved RON x Qg figure of merit (FOM) – 18.81 Ω-nC (SiHG22N60S-E3) ­ - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available – 15.12 Ω-nC (SiHG47N60S-E3) Ultra-low RDS(on) Ultra-low gate charge (Qg) 100 % avalanche tested dV/dt ruggedness Compliant to RoHS Directive 2002/95/EC Applications PFC power supply stages Hard switching topologies Solar inverters UPS Motor control Lighting Server telecom These devices are produced using Vishay Super Junction technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation modes. http://www.DataSheet4U.net/ Solar Cell and Inverter Block Diagram Solar Cell Isolated DC/DC Inverter Drive Drive * Drive * Grid Ctrl * Drive * Drive * Isolated DC/DC Bias for Controller Part Number SiHG22N60S-E3* SiHG47N60S-E3* VDS (V) 600 600 VGS (± V) 20 20 IDS (25 ºC) (A) 22 47 RDS(on) (mΩ)...