SIHG25N40D

SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 88 12 23 Single D FEATURES 450 0.17 Halogen-free According to IEC 61249-2-21 Definition Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching Compliant to RoHS Directive 2011/65/EU TO-247AC G S D G S N-Channel MOSFET APPLICATIONS Consumer Electronics - Displays (LCD or Plasma TV) Lighting Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers SMPS http://www.DataSheet4U.net/ ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free TO-247AC SiHG25N40D-E3 SiHG25N40D-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS PD TJ, Tstg TJ = 125 °C for 10 s dV/dt LIMIT 400 ± 30 30 25 16 78 2.2 556 278 - 55 to + 150 24 0.6 300c W/°C mJ W °C V/ns °C A V UNIT Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature R...