IRFP460B

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 170 14 28 Single D FEATURES Optimal Design 550 0.25 - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. TO-247AC G S D G S N-Channel MOSFET APPLICATIONS Consumer Electronics - Displays (LCD or Plasma TV) Server and Telecom Power Supplies - SMPS Industrial - Welding - Induction Heating - Motor Drives Battery Chargers SMPS - Power Factor Correction (PFC) http://www.DataSheet4U.net/ ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free TO-247AC IRFP460BPbF SiHG460B-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS PD TJ, Tstg dV/dt LIMIT 500 ± 20 30 20 13 62 2.2 281 278 - 55 to + 150 24 0.36 300c UNIT V A W/°C mJ W °C V/ns °C Pulsed D...