TK4A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA
Switching Regulator Applications
...
TK4A60DA
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA
Switching
Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 3.5 14 35 158 3.5 3.5
http://www.DataSheet4U.net/
Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
⎯ SC-67 2-10U1B
150 −55 to 150
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and est...