M58BW032BT

M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE – Access Time: 45, 55 and 60ns – 75MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads MEMORY ORGANIZATION – Eight 64 Kbit small parameter Blocks – Four 128Kbit large parameter Blocks (of which one is OTP) – Sixty-two 512Kbit main Blocks Figure 1. Packages PQFP80 (T) BGA ■ ■ ■ ■ ■ ■ HARDWARE BLOCK PROTECTION – WP pin Lock Program and Erase – VPEN signal for Program/Erase Enable SOFTWARE BLOCK PROTECTION – Tuning Protection to Lock Program and Erase with 64-bit User Programmable Password (M58BW032B version only) SECURITY – 64-bit Unique Device Identifier (UID) FAST PROGRAMMING – Write to Buffer and Program capability OPTIMIZED FOR FDI DRIVERS – Common Flash Interface (CFI) – Fast Program/Erase Suspend feature in each block LOW POWER CONSUMPTION – 100µA Typical Standby http://www.DataSheet4U.net/ LBGA80 (ZA) 10 x 8 ball array ■ ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M58BW032xT: 8838h – Bottom Device Code M58BW032xB: 8837h OPERATING TEMPERATURE RANGE – Automotive (Grade 3): –40 to 125°C – Industrial (Grade 6): –40 to 90°C November 2004 1/60 This is preliminary information on a new product now in development or undergoin...