2N918

JAN level (2N918J) JANTX level (2N918JX) JANTXV level (2N918JV) 2N918 Silicon NPN Transistor Data Sheet Description Semicoa Corporation offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N918J) JANTX level (2N918JX) JANTXV level (2N918JV) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV Radiation testing (total dose) upon request Applications Ultra-high frequency transistor Low power NPN silicon transistor Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT TJ TSTG Features Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/301 Benefits Qualification Levels: JAN, JANTX, and JANTXV Radiation testing available TC = 25°C unless otherwise specified Rating Unit 15 Volts 30 Volts 3 Volts 50 mA 200 mW 1.14 mW/°C -65 to +200 °C Copyright 2009 Rev. F Semicoa Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N918 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off...