2N930CSM

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N930CSM HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) SILICON PLANAR EPITAXIAL NPN TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) 1.02 ± 0.10 (0.04 ± 0.004) 0.76 ± 0.15 (0.03 ± 0.006) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector APPLICATIONS: Hermetically sealed surface mount version of the popular 2N930 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate above 25°C Operating and Storage Temperature Range 45V 45V 5V 30mA 500mW 2.85mW / °C 1.16W 12mW / °C –65 to +175°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO* V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat)* VBE(sat)* hFE fT Cob hib hrb hob hfe Collector – ...