2PB1219A

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 2PB1219A PNP general purpose transistor Product specification Supersedes data of 1997 Mar 25 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistor FEATURES High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). APPLICATIONS General purpose switching and amplification. DESCRIPTION handbook, halfpage 2PB1219A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 PNP transistor in a SOT323; SC70 plastic package. NPN complement: 2PD1820A. 1 3 MARKING TYPE NUMBER 2PB1219AQ 2PB1219AR 2PB1219AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) D∗Q D∗R D∗S Fig.1 Simplified outline (SOT323; SC70) and symbol. 1 Top view 2 MAM048 2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323; SC70 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −60 −50 −5 −500 −1 −200 200 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP ge...