N-Channel MOSFET
SSD20N15-250D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255mΩ
RoHS Compliant Produ...
Description
SSD20N15-250D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255mΩ
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.
A B
C D
PRODUCT SUMMARY
VDS(V) 150 PRODUCT SUMMARY RDS(on) m( 255@VGS= 10V 290@VGS= 5.5V
K
GE
HF
ID(A) 12 11
Gate
Drain
M
J
N O P
REF.
http://www.DataSheet4U.net/
Source
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
b a a
UNIT
V V A A A W °C °C / W °C / W
VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC
a
150 ±20 12 36 30 50 -55 ~ 175 50 3.0
Continuous Source Current (Diode Conduction) To...
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