2PD1820AQ

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor FEATURES High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). APPLICATIONS General purpose switching and amplification, especially for portable equipment. DESCRIPTION NPN transistor in an SC-70; SOT323 plastic package. PNP complement: 2PB1219A. handbook, halfpage 2PD1820A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING 2 TYPE NUMBER 2PD1820AQ 2PD1820AR 2PD1820AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) A∗Q A∗R A∗S Fig.1 Simplified outline (SC-70; SOT323) and symbol. 1 Top view 2 MAM336 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter MIN. − − − − − − − −65 − −65 MAX. 60 50 5 500 1 200 200 +150 150 +150 UNIT V V V mA A mA mW °C °C °C 1999 Apr 12 2 Philips Semiconductors ...