2PD601A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION handbook, halfpage 2PD601A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 NPN transistor in an SC-59 plastic package. PNP complement: 2PB709A. 1 3 MARKING TYPE NUMBER 2PD601AQ 2PD601AR 2PD601AS MARKING CODE ZQ ZR ZS 1 Top view 2 2 MAM321 Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 50 6 100 200 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 23 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 2...