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2PG401 Dataheets PDF



Part Number 2PG401
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Insulated Gate Bipolar Transistor
Datasheet 2PG401 Datasheet2PG401 Datasheet (PDF)

IGBTs 2PG401 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package 7.2±0.3 0.8±0.2 unit: mm 7.0±0.3 3.0±0.2 3.5±0.2 s Applications q For flash-light for use in a camera 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 s Absolute Maximum Ratings (TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Cha.

  2PG401   2PG401


2PD602A 2PG401 2PG402


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