2PG402

IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 s Applications s Absolute Maximum Ratings (TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 10 1 150 −55 to +150 Unit V V A A W °C °C 2.5± 0.1 2.5± 0.1 0.85± 0.1 4.6± 0.1 0.75± 0.1 0.5± 0.1 0.05 to 0.15 1.0± 0.1 2.3± 0.1 1 2 3 Marking 1: Emitter 2: Collector 3: Gate U Type Package s Electrical Characteristics (TC = 25°C) Parameter Collector to emitter cut-off current Gate to emitter leakage current Collector to emitter breakdown voltage Gate threshold voltage Collector to emitter saturation voltage Input capacitance (Common Emitter) Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time Symbol ICES IGES VCES VGE(th) VCE(sat) Cies td(on) tr td(off) tf VCC = 300V, IC = 130A VGE = 5V, Rg = 25Ω Conditions VCE = 320V, VGE = 0 VGE = ±8V, VCE = 0 IC = 1mA, VGE = 0 VCE = 10V, IC = 1mA VGE = 5V, IC = 5A VGE = 5V, IC = 130A VCE = 10V, VGE = 0, f = 1MHz 1930 130 1.4 350 1.5 400 0.5 1.5 2 10 min typ max 10 ±1 Unit µA µA V V V pF ns µs ns µs...