Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementar...
Power
Transistors
2SA0886 (2SA886)
Silicon
PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1.2 150 −55 to +150 Unit V
4.6±0.2 0.75±0.1
0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1
V V A A W °C °C
1 2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = −1 mA, IE = 0 IC = −2 mA, IB = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 A IC = −1.5 A, IB = − 0.15 A IC = −2 A, IB = − 0.2 A VCB = −5 V, IE = 0.5 A, f = 200 MHz VCB = −20 V, IE = 0, f = 1 MHz 150 45 80 Min −50 −40 −1 −100 −10 220 −1.0 −1.5 Typ Max Unit V V µA µA µA V V MHz pF
Note) 1. Measuring methods...