MRF8S7235NR3

Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (MHz) 728 748 768 Gps (dB) 20.0 20.2 20.1 ηD (%) 36.1 36.0 35.9 Output PAR (dB) 6.3 6.4 6.4 ACPR (dBc) --38.1 --39.0 --38.7 MRF8S7235NR3 728-768 MHz, 63 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications http://www.DataSheet4U.com/ OM-780-2 PLASTIC 225°C Capable Plastic Package In Tape and Reel. R3 Suffix = 25...