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APL602J

Advanced Power Technology

LINEAR MOSFET

APL602J 600V 43A 0.125Ω LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region wher...


Advanced Power Technology

APL602J

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APL602J 600V 43A 0.125Ω LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). Higher FBSOA Popular SOT-227 Package G S D S SO ISOTOP ® 2 T- 27 "UL Recognized" D Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 G S All Ratings: TC = 25°C unless otherwise specified. APL602J UNIT Volts Amps 600 43 172 ±30 ±40 565 4.52 http://www.DataSheet4U.com/ Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ -55 to 150 300 43 50 3000 (Repetitive and Non-Repetitive) 1 4 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 600 43 0.125 25 (VDS > I D(ON) x R DS(ON) Max, VGS = 12V) 2 Drain-Source On-State Resistance (VGS = 12V, 21.5A) Ohms µA Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = ...




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