2SA1011

Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 3.6 5.1 4.5 1.3 2.7 18.0 5.6 1.2 0.8 14.0 15.1 6.3 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C w w w . D a t a S 2.55 2.55 Conditions 2.7 ( ) : 2SA1011 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO220AB Ratings (–)180 (–)160 Unit V V V A A W ˚C ˚C h e e t . c o . k r (–)6 (–)1.5 (–)3 25 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Rank hFE D 60 to 120 Symbol ICBO IEBO hFE fT Cob VBE E 100 to 200 Conditions VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)300mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)10mA Ratings min typ max (–)10 (–)10 60* 100 (30) 23 (–)1.5 200* Unit µA µA MHz pF pF V * : The 2SA1011/2SC2344 are classified by 300mA hFE as follows : Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extrem...