GP4435

Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE : GP4435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 20m -9A The GP4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATING PLANE Z Z b L SECTION Z - Z b e DIP-8 c http://www.DataSheet4U.com/ Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 20 -9 -5.8 -50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 50 Unit /W GP4435 Page: 1/4 ISSUED DATE :2005/03/02 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 http://www.DataSheet4U.com/ Symbol BVDSS BVDSS / ...