2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SC2655 2SA1020 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 V −50 V −5 V −2 A −0.2 A 900 mW 150 °C −55 to 150 °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-11-09 2SA1020 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Col...