2SA1031

2SA1031, 2SA1032 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1031 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1032 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25°C) 2SA1031 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1032 Max — — — –0.5 –0.5 500 –0.8 –0.2 — 4.0 5 Min –55 –50 –5 — — 100 — — 200 — — Typ — — — — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –6 V, I C = –0.1 mA, Rg = 500 Ω, f = 120 Hz Min –30 –30 –5 — — 100 — — 200 — — Typ — — — — — — — — 280 3.3 — Base to emitter voltage VBE Collecto...