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2SA1032 Dataheets PDF



Part Number 2SA1032
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SA1032 Datasheet2SA1032 Datasheet (PDF)

2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1031 –30 –30 –5 –100.

  2SA1032   2SA1032



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2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1031 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1032 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25°C) 2SA1031 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1032 Max — — — –0.5 –0.5 500 –0.8 –0.2 — 4.0 5 Min –55 –50 –5 — — 100 — — 200 — — Typ — — — — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –6 V, I C = –0.1 mA, Rg = 500 Ω, f = 120 Hz Min –30 –30 –5 — — 100 — — 200 — — Typ — — — — — — — — 280 3.3 — Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF Note: 1. The 2SA1031 and 2SA1032 are grouped by h FE as follows. B C 160 to 320 160 to 320 D 250 to 500 — 100 to 200 100 to 200 2SA1031 2SA1032 3 2SA1031, 2SA1032 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics (1) –10 –25 –8 –20 –6 –4 –15 –10 –5 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 –0.2 –0.4 –0.6 –0.8 –1.0 Collector Emitter Voltage VCE (V) 200 100 –2 Typical Output Characteristics (2) –10 –25 Collector Current IC (mA) Collector Current IC (mA) –8 –20 –15 –4 –5 Typical Transfer Characteristics VCE = –5 V –4 –10 –5 µA IB = 0 –2 –2 –1 0 –5 –10 –15 –20 –25 0 –0.2 –0.4 –0.6 25 –0.8 –6 –3 Ta = 75°C –1.0 Collector Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) 4 2SA1031, 2SA1032 DC Current Transfer Ratio vs. Collector Current 700 600 VCE = –5 V Gain Bandwidth Product fT (MHz) DC Current Transfer Ratio hFE 500 400 VCE = –10 V Gain Bandwidth Product vs. Collector Current 500 400 300 200 300 100 200 –0.01 –0.1 –1.0 –10 –100 0 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current –0.28 –0.24 –0.20 –0.16 –0.12 –0.08 –0.04 0 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) .


2SA1031 2SA1032 2SA1034


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