Document
NVLJD4007NZ
MOSFET – Dual, N-Channel, Small Signal, Gate ESD Protection, 2x2 WDFN
30 V, 245 mA
Features
• Optimized Layout for Excellent High Speed Signal Integrity • Low Gate Charge for Fast Switching • Small 2 x 2 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State = 25°C
VDSS VGS ID
30
V
"10 V
245 mA
Power Dissipation (Note 1)
Steady State = 25°C
PD
755 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IDM TJ, TSTG ISD TL
1.2
A
−55 to °C 150
245 mA
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
166 °C/W
© Semiconductor Components Industries, LLC, 2013
1
July, 2019 − Rev. 1
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V(BR)DSS 30 V
RDS(on) Typ @ VGS 1.4 W @ 4.5 V
2.3 W @ 2.5 V
ID MAX (Note 1)
245 mA
D (6)
D (4)
G (2)
G (5)
S (1) N−Channel
S (3) N−Channel
MARKING DIAGRAM
1
WDFN6 CASE 506AN
1 2
JGG
6 5
3G 4
JG = Specific Device Code M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
S1 1
D1 6 D1
G1 2 D2
S2 3
5 G2 4 D2
(Top View)
ORDERING INFORMATION
Device
Package
NVLJD4007NZTAG WDFN6 (Pb−Free)
NVLJD4007NZTBG WDFN6 (Pb−Free)
Shipping†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Publication Order Number: NVLJD4007NZ/D
NVLJD4007NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
V(BR)DSS/TJ Reference to 25°C, ID = 100 mA
Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current
IDSS IDSS
VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 20 V,
T = 85 °C
Gate−to−Source Leakage Current Gate−to−Source Leakage Current Gate−to−Source Leakage Current
IGSS IGSS IGSS
VDS = 0 V, VGS = ±10 V VDS = 0 V, VGS = ±5 V VDS = 0 V, VGS = ±5 V
T = 85 °C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance
Forward Transconductance CAPACITANCES & GATE CHARGE
VGS(TH)
VDS = VGS, ID = 100 mA
0.5
VGS(TH)/TJ Reference to 25°C, ID = 100 mA
RDS(on)
VGS = 4.5 V, ID = 125 mA
VGS = 2.5 V, ID = 125 mA
gFS
VDS = 3 V, ID = 125 mA
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage SWITCHING CHARACTERISTICS (Note 3)
CISS COSS CRSS
Qg Qgs Qgd VGP
VDS = 5.0 V, f = 1 MHz, VGS = 0 V
VDS = 24 V, ID = 100 mA, VGS = 4.5 V
Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS
td(ON) tr
td(OFF) tf
VGS = 4.5 V, VDS = 24 V, ID = 125 mA, RG = 10 W
Forward Diode Voltage
VSD
VGS = 0 V, IS = 125 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
Typ Max Unit
V
27
mV/°C
1.0
mA
1.0
mA
±25
mA
±1.0 mA
±1.0 mA
1.0
1.5
V
−2.5
mV/°C
1.4
7.0
W
2.3
7.5
80
mS
12.2 20
10
15
pF
3.3
6.0
0.75
0.20
nC
0.20
1.57
V
9
ns
41
96
ns
72
0.79 0.9
V
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ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
1.2 1.1 1.0 0.9 0.8 0.7 0.6
0.5 0.4
0.3 0.2 0.1
0 0
VGS = 10 V 5.0 V
4.5 V
4.0 V 3.5 V
3.0 V 2.8 V 2.6 V 2.4 V 2.2 V 2.0 V 1.8 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
ID, DRAIN CURRENT (A)
1.2 1.1 1.0 0.9 0.8
0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
VDS = 5 V
TJ = 25°C
TJ = 150°C
TJ = −55°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
1.5
TJ = 25°C ID = 125 mA
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
10
9.0
TJ = 125°C
TJ = −55°C
8.0 TJ = 25°C 7.0
VGS = 2.5 V VGS .