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NVLJD4007NZ Dataheets PDF



Part Number NVLJD4007NZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N-Channel MOSFET
Datasheet NVLJD4007NZ DatasheetNVLJD4007NZ Datasheet (PDF)

NVLJD4007NZ MOSFET – Dual, N-Channel, Small Signal, Gate ESD Protection, 2x2 WDFN 30 V, 245 mA Features • Optimized Layout for Excellent High Speed Signal Integrity • Low Gate Charge for Fast Switching • Small 2 x 2 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (N.

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NVLJD4007NZ MOSFET – Dual, N-Channel, Small Signal, Gate ESD Protection, 2x2 WDFN 30 V, 245 mA Features • Optimized Layout for Excellent High Speed Signal Integrity • Low Gate Charge for Fast Switching • Small 2 x 2 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State = 25°C VDSS VGS ID 30 V "10 V 245 mA Power Dissipation (Note 1) Steady State = 25°C PD 755 mW Pulsed Drain Current tP v 10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM TJ, TSTG ISD TL 1.2 A −55 to °C 150 245 mA 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 166 °C/W © Semiconductor Components Industries, LLC, 2013 1 July, 2019 − Rev. 1 www.onsemi.com V(BR)DSS 30 V RDS(on) Typ @ VGS 1.4 W @ 4.5 V 2.3 W @ 2.5 V ID MAX (Note 1) 245 mA D (6) D (4) G (2) G (5) S (1) N−Channel S (3) N−Channel MARKING DIAGRAM 1 WDFN6 CASE 506AN 1 2 JGG 6 5 3G 4 JG = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS S1 1 D1 6 D1 G1 2 D2 S2 3 5 G2 4 D2 (Top View) ORDERING INFORMATION Device Package NVLJD4007NZTAG WDFN6 (Pb−Free) NVLJD4007NZTBG WDFN6 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NVLJD4007NZ/D NVLJD4007NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS VGS = 0 V, ID = 100 mA 30 V(BR)DSS/TJ Reference to 25°C, ID = 100 mA Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current IDSS IDSS VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 20 V, T = 85 °C Gate−to−Source Leakage Current Gate−to−Source Leakage Current Gate−to−Source Leakage Current IGSS IGSS IGSS VDS = 0 V, VGS = ±10 V VDS = 0 V, VGS = ±5 V VDS = 0 V, VGS = ±5 V T = 85 °C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CAPACITANCES & GATE CHARGE VGS(TH) VDS = VGS, ID = 100 mA 0.5 VGS(TH)/TJ Reference to 25°C, ID = 100 mA RDS(on) VGS = 4.5 V, ID = 125 mA VGS = 2.5 V, ID = 125 mA gFS VDS = 3 V, ID = 125 mA Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage SWITCHING CHARACTERISTICS (Note 3) CISS COSS CRSS Qg Qgs Qgd VGP VDS = 5.0 V, f = 1 MHz, VGS = 0 V VDS = 24 V, ID = 100 mA, VGS = 4.5 V Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 24 V, ID = 125 mA, RG = 10 W Forward Diode Voltage VSD VGS = 0 V, IS = 125 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. Typ Max Unit V 27 mV/°C 1.0 mA 1.0 mA ±25 mA ±1.0 mA ±1.0 mA 1.0 1.5 V −2.5 mV/°C 1.4 7.0 W 2.3 7.5 80 mS 12.2 20 10 15 pF 3.3 6.0 0.75 0.20 nC 0.20 1.57 V 9 ns 41 96 ns 72 0.79 0.9 V www.onsemi.com 2 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NVLJD4007NZ TYPICAL PERFORMANCE CURVES 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 VGS = 10 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V 2.8 V 2.6 V 2.4 V 2.2 V 2.0 V 1.8 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics ID, DRAIN CURRENT (A) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 VDS = 5 V TJ = 25°C TJ = 150°C TJ = −55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 1.5 TJ = 25°C ID = 125 mA 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage 10 9.0 TJ = 125°C TJ = −55°C 8.0 TJ = 25°C 7.0 VGS = 2.5 V VGS .


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