Schottky Rectifier. V20100C Datasheet

V20100C Rectifier. Datasheet pdf. Equivalent

Part V20100C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Feature www.vishay.com V20100C, VF20100C, VB20100C, VI20100C Vishay General Semiconductor Dual High-Voltag.
Manufacture Vishay
Datasheet
Download V20100C Datasheet



V20100C
www.vishay.com
V20100C, VI20100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V20100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VI20100C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
100 V
150 A
0.58 V
150 °C
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
V20100C
VI20100C
100
20
10
150
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1 Document Number: 89161
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



V20100C
www.vishay.com
V20100C, VI20100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.55
0.65
0.50
0.58
17
5.3
-
12
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
0.79
-
0.68
-
-
800
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
V20100C
VI20100C
2.8
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20100C-M3/4W
1.881
TO-262AA
VI20100C-M3/4W
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2 Document Number: 89161
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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