PTFA043002E

PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA043002E Package H-30275-4 Features Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent < –33 dBc Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Low HCI drift Pb-free and RoHS compliant Capable of handling 5:1 VSWR at 32 V, 300 W (CW) output power ƒ 1 = 799.5 MHz, ƒ 2 = 800.5 MHz Efficiency 3rd Order Drain Efficiency (%) 35 30 25 20 15 10 5 IM3, 5, 7 (dBc) -30 -40 -50 -60 -70 -80 -90 0 50 100 150 200 250 300 7th 5th 0 350 Output Power (W PEP) RF Characteristics ATSC 8VSB Characteristics (broadband fixture, push-pull configuration) (VDD = 32 V, POUT = 100 W AVG, IDQ = 1.55 A, ƒ = 800 MHz) Characteristic Common Source Power Gain Drain Efficiency FIrst Adjacent Symbol Gps ηD IMD Min — — — Typ 16 28 –33 Max — — — Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Ele...