PTFA071701E

PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E* Package H-36248-2 PTFA071701F* Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power Intermodulation Distortion (dBc) -25 -30 -35 -40 -45 -50 -55 -60 -65 44 46 48 50 52 54 IM3 IM5 Efficiency 50 45 40 35 30 25 IM7 20 15 Output Power, PEP (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon...