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PTFA072401FL Dataheets PDF



Part Number PTFA072401FL
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet PTFA072401FL DatasheetPTFA072401FL Datasheet (PDF)

PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal perform.

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PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2 Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz Features • • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enhanced packages, Pb-free and RoHS compliant with low gold (<0.25 micron) plating 21 20 19 65 55 Gain (dB) Gain 45 35 25 Drain Efficiency (%) • 18 17 16 15 30 35 40 45 50 55 • • • • Efficiency 15 5 Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average ƒ1 = 760 MHz, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min — — — Typ 19 25 –39 Max — — — Unit dB % dBc ηD IMD All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 *See Infineon distributor for future availability. Rev. 02, 2009-03-27 Free Datasheet http://www.datasheet4u.com/ PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min 18 43 — Typ 19 45 –29 Max — — –28 Unit dB % dBc ηD IMD DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 — — — 2.0 — Typ — — — 1.82 2.5 — Max — 1.0 10.0 — 3.0 1.0 Unit V µA µA Ω V µA On-State Resistance Operating Gate Voltage Gate Leakage Current VGS = 10 V, VDS = 0.1 V VDS = 30 V, IDQ = 2100 mA VGS = 10 V, VDS = 0 V Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 240 W CW) TSTG RθJC Symbol VDSS VGS TJ PD Value 65 –0.5 to +12 200 700 4.0 –40 to +150 0.28 Unit V V °C W W/°C °C °C/W Ordering Information Type and Version PTFA072401EL V4 PTFA072401FL V4 Package Outline H-33288-2 H-34288-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended 2 of 10 Shipping Tray Tray Marking PTFA072401EL PTFA072401FL *See Infineon distributor for future availability. Data Sheet Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Typical Performance (data taken in Infineon production test fixture) Broadband Performance VDD = 30 V, IDQ = 1800 mA, POUT = 126 W 50 0 -25 Two-tone Drive-up VDD = 30 V, IDQ = 1800 mA, ƒ = 765 MHz, tone spacing = 1 MHz 50 Gain (dB), Efficiency (%) 45 40 35 30 25 Efficiency Intermodulation Distortion (dBc) -5 Input Return Loss (dB) -30 -35 -40 -45 -50 -55 -60 42 44 46 Efficiency IM3 45 40 -10 Return Loss -15 -20 -25 IM5 35 30 25 Gain 20 15 700 -30 -35 790 IM7 48 50 52 54 56 20 15 730 760 Frequency (MHz) Output Power, PEP (dBm) CW Performance, selected voltages IDQ = 1.8 A, ƒ = 770 MHz V DD = 26 V V DD = 28 V V DD = 32 V Power Sweep VDD = 30 V, ƒ = 770 MHz 64 60 20 19 21 20 IDQ = 2.2 A IDQ = 2.0 A Drain Efficiency (%) Power Gain (dB) 56 52 48 44 Efficiency 19 18 17 16 15 30 35 40 45 50 55 18 17 16 Gain (dB) IDQ = 1.8 A IDQ = 1.6 A IDQ = 1.4 A 40 36 49 50 51 Gain 15 52 53 54 55 Output Power (dBm) Output Power (dBm) Data Sheet 3 of 10 Rev. 02, 2009-03-27 Drain Efficiency (%) PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Typical Performance (cont.) 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current -20 2.334 A 1.03 60 50 Drain Efficiency (%) TCASE = 25°C TCA.


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