Document
PTFA072401EL PTFA072401FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz
Description
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz
Features
• • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enhanced packages, Pb-free and RoHS compliant with low gold (<0.25 micron) plating
21 20 19
65 55
Gain (dB)
Gain
45 35 25
Drain Efficiency (%)
•
18 17 16 15 30 35 40 45 50 55
• • • •
Efficiency
15 5
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average ƒ1 = 760 MHz, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
— — —
Typ
19 25 –39
Max
— — —
Unit
dB % dBc
ηD
IMD
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 02, 2009-03-27
Free Datasheet http://www.datasheet4u.com/
PTFA072401EL PTFA072401FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
18 43 —
Typ
19 45 –29
Max
— — –28
Unit
dB % dBc
ηD
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 — — — 2.0 —
Typ
— — — 1.82 2.5 —
Max
— 1.0 10.0 — 3.0 1.0
Unit
V µA µA Ω V µA
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, VDS = 0.1 V VDS = 30 V, IDQ = 2100 mA VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 240 W CW) TSTG RθJC
Symbol
VDSS VGS TJ PD
Value
65 –0.5 to +12 200 700 4.0 –40 to +150 0.28
Unit
V V °C W W/°C °C °C/W
Ordering Information
Type and Version PTFA072401EL V4 PTFA072401FL V4 Package Outline H-33288-2 H-34288-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended 2 of 10 Shipping Tray Tray Marking PTFA072401EL PTFA072401FL
*See Infineon distributor for future availability. Data Sheet Rev. 02, 2009-03-27
PTFA072401EL PTFA072401FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in Infineon production test fixture)
Broadband Performance
VDD = 30 V, IDQ = 1800 mA, POUT = 126 W
50 0
-25
Two-tone Drive-up
VDD = 30 V, IDQ = 1800 mA, ƒ = 765 MHz, tone spacing = 1 MHz
50
Gain (dB), Efficiency (%)
45 40 35 30 25
Efficiency
Intermodulation Distortion (dBc)
-5
Input Return Loss (dB)
-30 -35 -40 -45 -50 -55 -60 42 44 46
Efficiency IM3
45 40
-10
Return Loss
-15 -20 -25
IM5
35 30 25
Gain
20 15 700 -30 -35 790
IM7
48 50 52 54 56
20 15
730
760
Frequency (MHz)
Output Power, PEP (dBm)
CW Performance, selected voltages
IDQ = 1.8 A, ƒ = 770 MHz
V DD = 26 V V DD = 28 V V DD = 32 V
Power Sweep
VDD = 30 V, ƒ = 770 MHz
64 60
20 19
21 20
IDQ = 2.2 A IDQ = 2.0 A
Drain Efficiency (%)
Power Gain (dB)
56 52 48 44
Efficiency
19 18 17 16 15 30 35 40 45 50 55
18 17 16
Gain (dB)
IDQ = 1.8 A IDQ = 1.6 A IDQ = 1.4 A
40 36 49 50 51
Gain
15 52 53 54 55
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02, 2009-03-27
Drain Efficiency (%)
PTFA072401EL PTFA072401FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
-20
2.334 A 1.03
60 50
Drain Efficiency (%)
TCASE = 25°C TCA.