PTFA080551F

PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz Features -35 -40 -45 Broadband internal matching Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 75 W - Gain = 17 dB - Efficiency = 67% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power Pb-free and RoHS compliant 40 35 Adj. Ch. Power Ratio (dBc) Efficiency Drain Efficiency (%) 30 25 ACP Low 20 15 10 5 0 29 31 33 35 37 39 41 43 -50 -55 -60 ACP Up ALT Up -65 -70 Output Power, Avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 26 W AVG, ƒ = 959.8 MHz Characteristic Error Vector Magnitude Mod...