PTFA081501F

PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA Performance VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz TCASE = 25°C TCASE = 90°C Features Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc Typical CW performance, 900 MHz, 28 V - Output power at P–1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power 50 40 -30 -40 Drain Efficiency (%) Adj 750 kHz 30 20 -50 -60 Efficiency 10 0 32 34 36 38 40 42 44 46 48 Alt1 1.98 MHz -70 -80 Output Power (dBm), Avg. RF Characteristics CDMA2000 3-Carrier Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 950 mA, POUT ...