Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, ...
Description
PTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2
PTFA091201F Package H-37248-2
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz
Features
Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 19.0 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 135 W - Gain = 18.0 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Pb-free and RoHS compliant Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
0
55 50
Modulation Spectrum (dBc)
-10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50
Efficiency
Drain Efficiency (%)
45 40 35
400 kHz
30 25 20
600 kHz
15 10
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT...
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