PTFA091201E

PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz Features Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 19.0 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 135 W - Gain = 18.0 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Pb-free and RoHS compliant Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power 0 55 50 Modulation Spectrum (dBc) -10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50 Efficiency Drain Efficiency (%) 45 40 35 400 kHz 30 25 20 600 kHz 15 10 Output Power, Avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT...