PTFA091203EL

PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.. PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance 3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.05 A Broadband internal matching -15 Intermodulation Distortion (dBc) -20 -25 -30 -35 -40 -45 -50 -55 Drain Efficiency (%) 960 MHz 940 MHz 920 MHz IMD Up Efficiency di 32 34 sc 36 38 n o 40 42 d e u n ti 40 35 30 25 20 15 10 5 0 46 48 IMD Low Typical two-carrier WCDMA performance, 960 MHz, 30 V - Average output power = 28 W - Gain = 17 dB - Efficiency = 27% - Intermodulation Distortion = –36 dBc Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 140 W - Gain = 17 dB - Efficiency = 54% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 120 W (CW) output power Pb-free and RoHS-compliant d o r p t c u 44 Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Inf...