PTFA092213FL

PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092213EL Package H-33288-6 PTFA092213FL Package H-34288-4/2 VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz Bandwidth 40 30 20 10 0 -10 -20 -30 30 -20 Two-carrier WCDMA Performance Features Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion = –32 dBc - Adjacent channel power = –42.5 dBc Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power Pb-free, RoHS-compliant Gain (dB) , Drain Efficiency (%) Gain Efficiency IMD_lower ACPR 40 45 50 -30 -35 -40 -45 -50 -55 IMD_upper 35 Out...