GM194

CORPORATION GM194 Description Features The GM194 is designed for medium power amplifier applications. 60 Volt VCEO 1 Amp continuous current Complementary to GM195 ISSUED DATE :2005/10/06 REVISED DATE : NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC IB PD Ratings +150 -55~+150 80 60 5 1 2 200 1 Unit V V V A A mA W Electrical Characteristics (Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 80 60 5 100 100 80 30 150 Typ. - , unless otherwise stated) Max. Unit Test Conditions V IC=100uA , IE=0 V IC=10mA, IB=0 V IE=100uA ,IC=0 100 nA VCB=60V, IE=0 100 nA VCES=60V 100 nA VEB=4V, IC=0 0.25 V IC=500mA, IB=50mA 0.5 V IC=1A, IB=100mA 1.1 V IC=1A, IB=100mA 1.0 V VCE=5V, IC=1A VCE=5V, IC=1mA 300 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=5V, IC=2A MHz VCE=10V, IC=50mA, f=100MHz 10 pF VCB=10V, IE=0, f=1MHz 2% *Measured under pulse condition. Pulse width=300 s, Duty Cycle GM194 Page: 1/2 Free Datasheet ...